Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements
Figure 2
The intensity of the Ge-Ge signal as a function of the excitation energy for the samples grown at (a) 300°C, (b) 400°C, (c) 500°C, and (d) 600°C. The arrows show the bulk Ge resonance.
