Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Figure 1

Transmission (a) and scanning ((b) and (c)) electron microscopy images of the cleft edge of porous layer in SiC: straight after anodization (a), after 1700°C anneal for 120 min (b), and after 1700°C anneal for 240 min (c).

(a)

(b)

(c)