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Advances in Condensed Matter Physics
Volume 2012, Article ID 651587, 7 pages
Research Article

The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

Department of Electrical Engineering, Kyungsung University, Busan 608-736, Republic of Korea

Received 17 August 2012; Accepted 18 September 2012

Academic Editor: Edvard Kokanyan

Copyright © 2012 Accarat Chaoumead et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around  nm/min under the experimental conditions of  mTorr of gas pressure and  W of RF power. The lowest volume resistivity of -cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of -cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.