ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

Table 1

RF sputtering conditions for deposition of ZnO films from ceramic targets.

Deposition parameter	Conditions
R.F. power (WAr)	200 W
Presputtering	5 min before each deposition
Base pressure	5 × 10^−6 torr
Argon pressure (PAr)	5 mtorr
Substrate temperature	Unheated and no control
Target-to-substrate distance	11.5 cm