Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
Figure 1
The experimental PR spectra (dashed curves) of Ge bulk, MQW removed sample, and Ge/Si0.16Ge0.84 MQW structure at (a) 10 K and (b) 300 K. The solid lines are fit to the first derivative of Lorentzian line-shape functional form. The obtained various transition energies are indicated by the arrows.
