Photoreflectance Spectroscopy Characterization of Ge/Si_0.16Ge_0.84 Multiple Quantum Wells on Ge Virtual Substrate

Table 1

Parameters of band gap energy, strain related constants, and effective mass for the Ge/SiGe material system.

Parameter	Symbol (unit)	Si	Ge	Reference
Lattice constant	𝑎0 (Å)	5.431	5.657	[30]
Band gap energy	𝐸𝑔 (eV)	4.06	0.802	[31, 32]
Hydrostatic deformation potential	𝑎 (eV)	−0.48	−8.97	[33, 34]
Shear deformation potential	𝑏 (eV)	−2.3	−1.88	[33, 34]
Elastic stiffness constant	𝐶11 (10^11 dyn/cm^2)	16.57	12.4	[35, 36]
Elastic stiffness constant	𝐶12 (10^11 dyn/cm^2)	6.39	4.13	[35, 36]
Electron effective mass	𝑚𝑒/𝑚0	0.188	0.045	[37, 38]
Heavy-hole effective mass	𝑚hh/𝑚0	0.528	0.284	[37, 39]
Light-hole effective mass	𝑚lh/𝑚0	0.157	0.044	[37, 39]