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Advances in Condensed Matter Physics
Volume 2013, Article ID 465498, 5 pages
Research Article

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

1The Center of Coordination and Support of State Administration of Science, Technology and Industry for National Defence, Beijing 100081, China
2Advanced Technology Generalization Institute of CNGC, Beijing 100089, China
3School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China
4The 41st Institute of China Electronics Technology Group Corporation, Qingdao 266555, China

Received 17 June 2013; Accepted 14 August 2013

Academic Editor: Jianhua Hao

Copyright © 2013 Wang Bin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


During the process of heteroepitaxial growth, if the lattice constant of the growing film differs from that of the substrate, the wafer surface bows, regardless of whether the lattice mismatch occurs or not. As the growth in large-scale wafers speeds up, bowing effects are becoming more and more important. Wafer bowing has a direct impact on the yield in modern mass-production compound semiconductor industries. By using finite element analysis software, the bowing deformation of the GaN wafer on sapphire substrate can be studied. This paper summarizes the causes of bowing deformation, builds the mathematical model, and deduces the relation equation of the wafer bowing. The results show that epitaxial wafer bowing has a linear relationship with the square of the diameter of the substrate but has little relationship with the thickness of the substrate. Moreover, the relation equation of the wafer bowing is also simplified finally.