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Advances in Condensed Matter Physics
Volume 2013, Article ID 465498, 5 pages
Research Article

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

1The Center of Coordination and Support of State Administration of Science, Technology and Industry for National Defence, Beijing 100081, China
2Advanced Technology Generalization Institute of CNGC, Beijing 100089, China
3School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China
4The 41st Institute of China Electronics Technology Group Corporation, Qingdao 266555, China

Received 17 June 2013; Accepted 14 August 2013

Academic Editor: Jianhua Hao

Copyright © 2013 Wang Bin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Wang Bin, Qu Yu-xuan, Hu Shi-gang, Tang Zhi-jun, Li Jin, and Hu Ying-lu, “Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate,” Advances in Condensed Matter Physics, vol. 2013, Article ID 465498, 5 pages, 2013.