Advances in Condensed Matter Physics / 2013 / Article / Fig 4

Research Article

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

Figure 4

Simulation results of bowing amount of different size substrate (a) deformation of sapphire substrate with different sizes (10 times effect), (b) relation curve of maximum amount of bowing and substrate diameter.
465498.fig.004a
(a)
465498.fig.004b
(b)

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