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Advances in Condensed Matter Physics
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Advances in Condensed Matter Physics
/
2013
/
Article
/
Tab 1
/
Research Article
Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method
Table 1
Ionization energy
and formation energy
of defect complexes in ZnS.
2N
S
–Al
Zn
2N
S
–Ga
Zn
2N
S
–In
Zn
N
S
(0/−) (meV)
40.1
37.5
44.1
103.9
Δ
(eV)
3.04
3.17
3.16
3.35