A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

<table>The simulated current-related sensitivity <svg height="15.5375" id="M109" style="vertical-align:-3.276pt" version="1.1" viewbox="0 0 14.1125 15.5375" width="14.1125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.4)"><path d="M457 488l-30 -3q-17 148 -131 148q-53 0 -84.5 -34.5t-31.5 -82.5q0 -42 25.5 -72t74.5 -62l33 -22q63 -42 95 -85t32 -102q0 -84 -67 -137t-163 -53q-58 0 -113 22t-70 43l-4 152l27 4q4 -32 15 -62.5t31 -59.5t53.5 -47t76.5 -18q56 0 92 35t36 96q0 39 -25 70t-78 68
l-31 22q-32 23 -53.5 41.5t-45 57t-23.5 77.5q0 82 58 132.5t156 50.5q46 0 101 -17l18.5 -6t17 -6t8.5 -3q-4 -55 0 -147z" id="x1D446"></path></g>
<g transform="matrix(.012,-0,0,-.012,8.225,15.475)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g>
</svg> versus the temperature.</table>

Advances in Condensed Matter Physics

fig12

Figure 12

Figure 12: A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects 