A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

Table 1

Specific parameters evaluation for some of the integrated Hall cells.

Integrated geometry	XL	Optimum	Borderless
Shape
Measured 𝑅 (kΩ); @𝑇=300 K, 𝐵=0 T	2.2	1.8	1.3
Measured 𝑆𝐼 (V/AT); @𝐼bias = 1 mA	80.6	62.4	31.1
Measured offset drift (𝜇T/°C)	0.039	0.328	0.526
L,W (μm) of the n-well	𝐿=43.2	𝐿=50	𝐿=50
	𝑊=19	𝑊=50	𝑊=50
Contacts length (μm)	18.3	4.7	2.3