A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

Table 2

Process 1 parameters.

Parameter	Symbol	Numerical value
Length	L	43.2⋅10^−6 m
Width	W	22.6⋅10^−6 m
Thickness	t	10^−6 m
Donor concentration	𝑁𝑑	8.16⋅10^22 m^−3
Acceptor concentration	𝑁𝑎	10^21 m^−3
Conductivity	σ	933 Sm^−1
Mobility	μ	0.0715 cm^−2V^−1s^−1
Magnetic field	B	0.5 T