Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering
Figure 2
AFM image of (a) typical as-deposited film ( = 2.67 Pa), (b) the same film, after annealing at 200°C, and (c) after annealing at 500°C. For all images output = 32 nm.
