Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

Table 2

Resistivity values as a function of 𝑃_Ar for films annealed at 200 and 500°C.

𝑃Ar (Pa)	Resistivity (Ω cm) at 302 K
	200°C	500°C
2.67	3.7 × 10^3	1.8 × 10^−1
5.33	5.9 × 10^4	4.3 × 10^−1
8.00	6.2 × 10^4	8.5 × 10^−1
10.66	1.1 × 10^6	2.4 × 10^1