Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

<table>Cube root of the IPE yield as a function of photon energy plot used to find the spectral threshold <svg height="15.5375" id="M120" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 18.487499 15.5375" width="18.487499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> of electron IPE from the VB of Si into the CB of Gd<sub><i>x</i></sub>Al<sub>1−<i>x</i></sub>O<sub>3</sub> is indicated by vertical line.</table>

Advances in Condensed Matter Physics

fig12

Figure 12

Figure 12: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 