Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 13
Square root of the PC yield as a function of photon energy in Si/SiO2/LuxAl1−xO3/Au capacitors with different concentration of lutetium in the insulating layer as measured under positive (a) and negative (b) bias of 2 V applied to the top Au electrode. The results are shown both for the as-deposited samples as for those supplementally annealed at 1000°C in N2 for 1 min prior to metallization. The inferred spectral thresholds of the intrinsic PC are indicated by vertical lines and .