Advances in Condensed Matter Physics / 2014 / Article / Fig 19

Review Article

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Figure 19

(a) Electron IPE quantum yield as a function of photon energy measured on (100)Si0.72Ge0.28/SiO2(83 nm)/Al samples under indicated positive bias on the Al gate electrode. (b) Determination of the electron IPE threshold ( ) using plots. Lines guide the eye. The inset shows a magnified view of the photocurrent yield in the subthreshold spectral region.
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(a)
301302.fig.0019b
(b)