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Advances in Condensed Matter Physics
Volume 2014, Article ID 609024, 8 pages
http://dx.doi.org/10.1155/2014/609024
Research Article

Atomistic Simulation of Intrinsic Defects and Trivalent and Tetravalent Ion Doping in Hydroxyapatite

1Departamento de Física, Universidade Federal de Sergipe, 49100-000 São Cristóvão, SE, Brazil
2Departamento de Física, Universidade Federal de Sergipe, 49500-000 Itabaiana, SE, Brazil

Received 26 June 2014; Revised 4 September 2014; Accepted 16 September 2014; Published 12 October 2014

Academic Editor: Dario Alfe

Copyright © 2014 Ricardo D. S. Santos and Marcos V. dos S. Rezende. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ricardo D. S. Santos and Marcos V. dos S. Rezende, “Atomistic Simulation of Intrinsic Defects and Trivalent and Tetravalent Ion Doping in Hydroxyapatite,” Advances in Condensed Matter Physics, vol. 2014, Article ID 609024, 8 pages, 2014. https://doi.org/10.1155/2014/609024.