Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes

Figure 2

Cross-sectional HRTEM image of the InGaN/GaN MQW region in the LED. The bright rows are the InGaN layers. Some MQWs are not able to be observed at the position of the TD. The inset shows a large magnification of the MQWs; there are not any side-wall wells, stacking faults at the InGaN/GaN interfaces, or so-called InGaN quantum dots observed in the MQWs region.