Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes
Figure 5
(a) SEM and ((b)–(d)) mono-CL images of the InGaN/GaN LEDs at low temperature. The CL images in ((b)–(d)) correspond to GaN, high-energy, and blue emission, respectively. The V-pits on the surface are not observed by the SEM measurements because of their shallow depth. Dark spots in (b) correspond to the dislocations in the LED structure. The dashed circles in (b)–(d) show competitions of the emissions around the dislocations.
