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Advances in Condensed Matter Physics
Volume 2014, Article ID 828492, 7 pages
http://dx.doi.org/10.1155/2014/828492
Research Article

Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

1Department of Electronics and Communication Engineering, Karunya University, Coimbatore 641114, India
2Department of Electronics and Communication Engineering, Government College of Technology, Coimbatore 641013, India

Received 11 October 2013; Revised 22 December 2013; Accepted 5 January 2014; Published 16 February 2014

Academic Editor: Nian X. Sun

Copyright © 2014 I. Flavia Princess Nesamani et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Zirconium dioxide is a prospective high-κ material that can replace silicon dioxide. Zirconium dioxide nanoparticle has been synthesized using sol-gel process at room temperature. The structural and morphological characterization of the nanoscaled zirconium dioxide is done using FTIR, SEM, X-ray diffraction, and TEM. The particle size of the synthesized ZrO2 is observed in the range of 50–80 nm with an average crystallite size of 2–10 nm. The results are compared with commercial coarse zirconia which showed a particle size in the range of 900 nm–2.13 µm and crystallite size of 5.3 nm–20 nm. It is expected that both nanoscaling and the high dielectric constant of ZrO2 would be useful in replacing the low-κ SiO2 dielectric with high-κ ZrO2 for CMOS fabrication technology. The synthesized ZrO2 is subjected to impedance analysis and it exhibited a dielectric constant of 25 to find its application in short channel devices like multiple gate FinFETS and as a suitable alternative for the conventional gate oxide dielectric SiO2 with dielectric value of 3.9, which cannot survive the challenge of an end of oxide thickness ≤ 1 nm.