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Advances in Condensed Matter Physics
Volume 2014, Article ID 957067, 7 pages
Research Article

Numerical Analysis of Oxygen Adsorption on SnO2 Surface Using Slab Geometry

Institute of Electronics, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland

Received 31 May 2013; Accepted 21 October 2013; Published 16 January 2014

Academic Editor: Jörg Fink

Copyright © 2014 Weronika Izydorczyk. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Oxidation of thin film SnO2 layer was simulated. In particular, the evolution of depletion layer was investigated by solving Poisson-Boltzmann equation for SnO2 slab geometry grains. On this basis, the surface energy barrier dependence on layer thickness (30–500 nm) was obtained. The effect of the donor mobility (oxygen vacancies in the bulk) and degree of donor ionization on electric potential inside layer with different thicknesses was discussed. Furthermore, the dependence of per-square conductance on temperature (from 400 K to 700 K) has been computed. It was assumed that the bulk oxygen vacancies (donors) are singly or doubly ionized and mobile. The temperature variations in the carrier mobility were also taken into account.