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Advances in Condensed Matter Physics
Volume 2014, Article ID 971528, 7 pages
http://dx.doi.org/10.1155/2014/971528
Research Article

In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

1College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Republic of Korea
2Laboratory of Advanced Materials, University of Science, 227 Nguyen Van Cu Street, 5th District, Ho Chi Minh City 70000, Vietnam
3Faculty of Materials Science, University of Science, 227 Nguyen Van Cu Street, 5th District, Ho Chi Minh City 70000, Vietnam

Received 21 October 2014; Accepted 7 December 2014; Published 28 December 2014

Academic Editor: Markus R. Wagner

Copyright © 2014 Duy Phong Pham et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO) to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.