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Advances in Condensed Matter Physics
Volume 2015, Article ID 267680, 7 pages
http://dx.doi.org/10.1155/2015/267680
Research Article

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

University of Electronic Science and Technology of China, Chengdu 610054, China

Received 26 February 2015; Revised 5 June 2015; Accepted 17 June 2015

Academic Editor: Ashok Chatterjee

Copyright © 2015 Chao Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chao Yang, Jiayun Xiong, Jie Wei, Junfeng Wu, Bo Zhang, and Xiaorong Luo, “High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment,” Advances in Condensed Matter Physics, vol. 2015, Article ID 267680, 7 pages, 2015. https://doi.org/10.1155/2015/267680.