High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

Figure 3

(a) Influence of on conduction band; (b) 2DEG density of the three different MIS-HEMTs at on state; (c) 2DEG density of the three different MIS-HEMTs in the drift region at off state.

(a)

(b)

(c)