Design of a Novel W-Sinker RF LDMOS

<table class="figure-group"><tr class="fig-image" id="a"><td><object data="https://static.hindawi.com/articles/acmp/volume-2015/312646/figures/312646.fig.004a.svgz" name="312646.fig.004a" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(a) </b>ID-VG curve</td></tr><tr class="fig-image" id="b"><td><object data="https://static.hindawi.com/articles/acmp/volume-2015/312646/figures/312646.fig.004b.svgz" name="312646.fig.004b" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(b) </b>ID-VD curve</td></tr><tr class="fig-image" id="c"><td><object data="https://static.hindawi.com/articles/acmp/volume-2015/312646/figures/312646.fig.004c.svgz" name="312646.fig.004c" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(c) </b>Breakdown curve</td></tr><tr class="fig-image" id="d"><td><object data="https://static.hindawi.com/articles/acmp/volume-2015/312646/figures/312646.fig.004d.svgz" name="312646.fig.004d" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(d) </b>Idq degradation versus time</td></tr></table>

<div>DC characteristics of W-sinker RF LDMOS device (<svg height="8.60601pt" id="M9" style="vertical-align:-0.1560001pt" version="1.1" viewbox="0 -8.45001 40.2478 8.60601" width="40.2478pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M1013 650H775L768 618L793 615C853 608 859 601 837 545C792 433 708 266 639 131H637L537 639H503L251 132H249L190 552C183 602 190 607 235 614L262 618L269 650H25L18 618C92 610 95 608 107 525L184 -9H221L475 494H479L576 -9H613L884 526C928 607 934 609 1005 618L1013 650Z" id="g50-88"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="1025" vert-adv-y="1025"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,16.461,0)"><path d="M556 331V384H55V331H556ZM556 140V193H55V140H556Z" id="g54-34"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="611" vert-adv-y="611"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,28.08,0)"><path d="M253 635C142 635 71 555 71 471C71 401 113 353 178 316C144 294 106 267 91 252C70 231 46 202 46 157C46 51 132 -12 241 -12C328 -12 442 52 442 168C442 257 379 305 311 343C354 373 380 398 388 407C406 428 417 458 417 487C417 568 348 635 253 635ZM240 600C288 600 340 563 340 481C340 423 313 387 279 360C207 394 148 427 148 499C148 549 182 600 240 600ZM252 23C188 23 129 73 129 163C129 217 162 266 211 298C289 260 360 217 360 144C360 69 312 23 252 23Z" id="g50-57"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="487" vert-adv-y="487"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,34.411,0)"><path d="M245 635C92 635 37 457 37 312C37 149 91 -12 244 -12C395 -12 449 166 449 312C449 469 395 635 245 635ZM243 598C332 598 358 454 358 312C358 173 334 26 245 26C158 26 128 174 128 313S152 598 243 598Z" id="g50-49"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="487" vert-adv-y="487"></glyph.data></g></svg> um).</div>

Advances in Condensed Matter Physics

Design of a Novel W-Sinker RF LDMOS

Figure 4