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Advances in Condensed Matter Physics
Volume 2015 (2015), Article ID 423791, 6 pages
http://dx.doi.org/10.1155/2015/423791
Research Article

Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

1Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China
2Laboratory of Advanced Material, Fudan University, Shanghai 200438, China

Received 21 October 2014; Accepted 17 December 2014

Academic Editor: Wen Lei

Copyright © 2015 C. H. Yu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

C. H. Yu, X. Y. Chen, X. D. Luo, W. W. Xu, and P. S. Liu, “Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications,” Advances in Condensed Matter Physics, vol. 2015, Article ID 423791, 6 pages, 2015. doi:10.1155/2015/423791