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Advances in Condensed Matter Physics
Volume 2015 (2015), Article ID 469487, 6 pages
Research Article

Structural and Electronic Properties of GaN (0001)/α-Al2O3 (0001) Interface

Departamento de Física, Universidade Federal do Maranhão, 65080-805 São Luís, MA, Brazil

Received 20 February 2015; Revised 29 April 2015; Accepted 6 May 2015

Academic Editor: Ram N. P. Choudhary

Copyright © 2015 M. B. Pereira et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

M. B. Pereira, E. M. Diniz, and S. Guerini, “Structural and Electronic Properties of GaN (0001)/α-Al2O3 (0001) Interface,” Advances in Condensed Matter Physics, vol. 2015, Article ID 469487, 6 pages, 2015. doi:10.1155/2015/469487