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Advances in Condensed Matter Physics
Volume 2015 (2015), Article ID 469487, 6 pages
http://dx.doi.org/10.1155/2015/469487
Research Article

Structural and Electronic Properties of GaN (0001)/α-Al2O3 (0001) Interface

Departamento de Física, Universidade Federal do Maranhão, 65080-805 São Luís, MA, Brazil

Received 20 February 2015; Revised 29 April 2015; Accepted 6 May 2015

Academic Editor: Ram N. P. Choudhary

Copyright © 2015 M. B. Pereira et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. Q. Chen, H. Hu, X. Chen, and J. Wang, “Tailoring band gap in GaN sheet by chemical modification and electric field: Ab initio calculations,” Applied Physics Letters, vol. 98, no. 5, Article ID 053102, 2011. View at Publisher · View at Google Scholar
  2. J. Q. Wu, “When group-III nitrides go infrared: new properties and perspectives,” Journal of Applied Physics, vol. 106, no. 1, Article ID 011101, 2009. View at Publisher · View at Google Scholar
  3. C. Ostermaier, H. C. Lee, S. Y. Hyun et al., “Interface characterization of ALD deposited Al2O3 on GaN by CV method,” Physica Status Solidi C: Current Topics in Solid State Physics, vol. 5, no. 6, pp. 1992–1994, 2008. View at Publisher · View at Google Scholar · View at Scopus
  4. S. C. Jain, M. Willander, J. Narayan, and R. van Overstraeten, “III-nitrides: growth, characterization, and properties,” Journal of Applied Physics, vol. 87, no. 3, 2000. View at Publisher · View at Google Scholar · View at Scopus
  5. D. Ehrentraut and Z. Sitar, “Advances in bulk crystal growth of AIN and GaN,” MRS Bulletin, vol. 34, no. 4, pp. 259–265, 2009. View at Publisher · View at Google Scholar · View at Scopus
  6. M. Placidi, A. Constant, A. Fontser et al., “Deposited thin SiO2 for gate oxide on n-type and p-type GaN,” Journal of the Electrochemical Society, vol. 157, no. 11, pp. H1008–H1013, 2010. View at Publisher · View at Google Scholar · View at Scopus
  7. Y. C. Chang, H. C. Chiu, Y. J. Lee et al., “Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN,” Applied Physics Letters, vol. 90, no. 23, Article ID 232904, 2007. View at Publisher · View at Google Scholar · View at Scopus
  8. J. Robertson, “High dielectric constant oxides,” The European Physical Journal—Applied Physics, vol. 28, no. 3, pp. 265–291, 2004. View at Publisher · View at Google Scholar
  9. N. V. Nguyen, O. A. Kirillov, W. Jiang et al., “Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment,” Applied Physics Letters, vol. 93, no. 8, Article ID 082105, 2008. View at Publisher · View at Google Scholar · View at Scopus
  10. R. D. Long and P. C. McIntyre, “Surface preparation and deposited gate oxides for gallium nitride based metal oxide semiconductor devices,” Materials, vol. 5, no. 7, pp. 1297–1335, 2012. View at Publisher · View at Google Scholar · View at Scopus
  11. P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,” Physical Review, vol. 136, no. 3, pp. B864–B871, 1964. View at Publisher · View at Google Scholar
  12. J. P. Perdew, K. Burke, and M. Ernzerhof, “Generalized gradient approximation made simple,” Physical Review Letters, vol. 77, no. 18, article 3865, 1996. View at Publisher · View at Google Scholar · View at Scopus
  13. G. Kresse and D. Furthmüller, “Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set,” Physical Review B, vol. 54, pp. 11169–11186, 1996. View at Publisher · View at Google Scholar
  14. P. E. Blöchl, “Projector augmented-wave method,” Physical Review B, vol. 50, no. 24, pp. 17953–17979, 1994. View at Publisher · View at Google Scholar
  15. H. J. Monkhorst and J. D. Pack, “Special points for Brillouin-zone integrations,” Physical Review B. Solid State, vol. 13, no. 12, pp. 5188–5192, 1976. View at Publisher · View at Google Scholar · View at MathSciNet
  16. E. A. Chagarov and A. C. Kummel, “Ab initio molecular dynamics simulations of properties of α-Al2O3/vacuum and α-ZrO2/vacuum vs α-Al2O3/Ge (100) (2×1) and α-ZrO2/Ge (100) (2×1) interfaces,” The Journal of Chemical Physics, vol. 130, Article ID 124717, 2009. View at Publisher · View at Google Scholar
  17. S. Alavi, D. C. Sorescu, and D. L. Thompson, “Adsorption of HCl on single-crystal α-Al2O3 (0001) surface: a DFT study,” The Journal of Physical Chemistry B, vol. 107, no. 1, pp. 186–195, 2003. View at Publisher · View at Google Scholar · View at Scopus
  18. G. Gutiérrez and B. Johansson, “Molecular dynamics study of structural properties of amorphous Al2O3,” Physical Review B, vol. 65, Article ID 104202, 2002. View at Publisher · View at Google Scholar
  19. P. Lamparter and R. Kniep, “Structure of amorphous Al2O3,” Physica B: Condensed Matter, vol. 234–236, pp. 405–406, 1997. View at Publisher · View at Google Scholar · View at Scopus
  20. I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” Journal of Applied Physics, vol. 94, no. 6, pp. 3675–3696, 2003. View at Publisher · View at Google Scholar · View at Scopus
  21. F. Nahif, D. Musuc, S. Mrz, M. to Baben, and J. M. Schneider, “Ab initio study of the effect of Si on the phase stability and electronic structure of γ- and α-Al2O3,” Journal of Physics: Condensed Matter, vol. 25, Article ID 125502, 2013. View at Publisher · View at Google Scholar