Hydrostatic Pressure and Built-In Electric Field Effects on the Donor Impurity States in Cylindrical Wurtzite GaN/Al_xGa_1−xN Quantum Rings

Table 4

Band gap pressure coefficients (meV/GPa), Born effective charges , and phonon frequencies and (cm⁻¹).

		Z^∗	du/d	du/d
GaN	39^a	1.18^b	0.262^b	−0.208^b	757^b	748^b	568^b	540^b
AlN	40^a	1.27^b	0.308^b	−0.242^b	924^b	898^b	677^b	318^b

 ^aReference [43], ^breference [39].