Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

Table 1

Typical device parameters used in the simulation and model calculation.

Parameters	Typical values
Source doping density, (cm^−3)	10^20
Drain doping density, (cm^−3)	10^20
Gate length, (nm)	20
Gate oxide thickness, (nm)	1
Radius of nanowire, (nm)	4