Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Figure 1

Schematic I-V curves for two types of NDR which corresponds to the regions in the curves where dV/dI < 0. Inserts show sketches of a high-current filament (a) and a high-field domain (b) inherent to S- and N-NDR, respectively [2] (where (1) is metal electrodes, (2) is insulating (e.g., initial oxide or amorphous CGS) film, (3) is switching channel emerging after electrical forming, (4) is current filament, and (5) is high-field domain).

(a)

(b)