Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Figure 21

Maximum electron density in the switching channel as a function of ambient temperature; in fact, depends on the threshold electric field , and the latter, in turn, depends on . The calculations are made for the cases of = const (curve 1) and ~ (curve 2). Here () is the temperature in the channel centre calculated on the basis of mathematical simulating [30].