Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Figure 7

Gibbs potential change (per 1 g atom of metal) for the reaction of the highest oxide with the metal substrate versus , the oxygen stoichiometric index of the lower oxide, which is formed in this reaction. Symbol indications are as follows. (i) Iron: F1–FeO; F2–Fe₃O₄; F3–Fe₂O₃. (ii) Niobium: N1–NbO; N2–NbO₂; N3–Nb₂O₅. (iii) Titanium: T1–TiO; T2–Ti₂O₃; T3–T10– (–10); T11–TiO₂. (iv) Vanadium: V1–VO; V2–V₂O₃; V3–V8– (–8); V9–VO₂; V10–V₆O₁₃; V11–V₂O₅. (v) Tungsten: W1–WO₂; W2–W₁₈O₄₉; W3–W₁₀O₂₉; W4–W₅₀O₁₄₈; W5–WO₃. (vi) Manganese: M1–MnO; M2–Mn₃O₄; M3–Mn₂O₃; M4–MnO₂. (vii) Uranium: U1–UO₂; U2–U₄O₉; U3–U₃O₇; U4–U₃O₈; U5–UO₃. The points T2′ and V9′ characterize a scatter due to the Δ data difference [22, 28].