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Advances in Condensed Matter Physics
Volume 2015, Article ID 654840, 26 pages
http://dx.doi.org/10.1155/2015/654840
Review Article

Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Faculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, Russia

Received 6 April 2015; Revised 19 July 2015; Accepted 18 August 2015

Academic Editor: Ram N. P. Choudhary

Copyright © 2015 A. Pergament et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S. R. Ovshinsky, “Reversible electrical switching phenomena in disordered structures,” Physical Review Letters, vol. 21, no. 20, pp. 1450–1453, 1968. View at Publisher · View at Google Scholar · View at Scopus
  2. E. Schöll, Nonequilibrium Phase Transitions in Semiconductors. Self-Organization Induced by Generation and Recombination Processes, Springer, Berlin, Germany, 1987.
  3. B. T. Kolomiets, “Vitreous semiconductors,” Physica Status Solidi (B), vol. 7, no. 2, pp. 359–372, 1964. View at Google Scholar
  4. A. Pergament, G. Stefanovich, A. Velichko, V. Putrolainen, T. Kundozerova, and T. Stefanovich, “Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications,” Journal of Characterization and Development of Novel Materials, vol. 4, no. 2, pp. 83–110, 2011. View at Google Scholar
  5. G. W. Burr, M. J. Breitwisch, M. Franceschini et al., “Phase change memory technology,” Journal of Vacuum Science and Technology B, vol. 28, no. 2, pp. 223–262, 2010. View at Publisher · View at Google Scholar · View at Scopus
  6. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, “Electrical phenomena in amorphous oxide films,” Reports on Progress in Physics, vol. 33, no. 3, pp. 1129–1191, 1970. View at Publisher · View at Google Scholar · View at Scopus
  7. K. L. Chopra, “Avalanche-induced negative resistance in thin oxide films,” Journal of Applied Physics, vol. 36, no. 1, pp. 184–187, 1965. View at Publisher · View at Google Scholar · View at Scopus
  8. D. P. Oxley, “Electroforming, switching and memory effects in oxide thin films,” ElectroComponent Science and Technology, vol. 3, no. 4, pp. 217–224, 1977. View at Publisher · View at Google Scholar · View at Scopus
  9. Y. Zhu and M. Li, “Bipolar resistive switching characteristic of epitaxial NiO thin film on Nb-doped SrTiO3 substrate,” Advances in Condensed Matter Physics, vol. 2012, Article ID 364376, 8 pages, 2012. View at Publisher · View at Google Scholar · View at Scopus
  10. M.-J. Lee, S. I. Kim, C. B. Lee et al., “Low-temperature-grown transition metal oxide based storage materials and oxide transistors for high-density non-volatile memory,” Advanced Functional Materials, vol. 19, no. 10, pp. 1587–1593, 2009. View at Publisher · View at Google Scholar · View at Scopus
  11. B. Lalevic, N. Fuschillo, and W. Slusark Jr., “Switching in Nb-Nb2O5-Nb devices with doped Nb2O5 amorphous films,” IEEE Transactions on Electron Devices, vol. ED-22, no. 10, pp. 965–967, 1975. View at Google Scholar · View at Scopus
  12. G. C. Vezzoli, “Recovery curve for threshold-switching NbO2,” Journal of Applied Physics, vol. 50, no. 10, pp. 6390–6395, 1979. View at Publisher · View at Google Scholar · View at Scopus
  13. S. H. Shin, T. Halpern, and P. M. Raccah, “High-speed high-current field switching of NbO2,” Journal of Applied Physics, vol. 48, no. 7, article 3150, pp. 3150–3153, 1977. View at Publisher · View at Google Scholar · View at Scopus
  14. G. C. Vezzoli, P. J. Walsh, and M. A. Shoga, “Interpretation of recent transient on-state data in thin chalcogenide glass and NbO2 threshold switching material,” Philosophical Magazine B, vol. 63, no. 3, pp. 739–755, 1991. View at Google Scholar · View at Scopus
  15. G. Taylor and B. Lalevic, “RF relaxation oscillations in polycrystalline TiO2 thin films,” Solid State Electronics, vol. 19, no. 8, pp. 669–674, 1976. View at Publisher · View at Google Scholar · View at Scopus
  16. B. P. Zakharchenya, V. P. Malinenko, G. B. Stefanovich, M. Y. Terman, and F. A. Chudnovskii, “Switching in MOM structures based on vanadium dioxide,” Soviet Technical Physics Letters, vol. 11, pp. 108–111, 1985. View at Google Scholar
  17. R. C. Morris, J. E. Christopher, and R. V. Coleman, “Conduction phenomena in thin layers of iron oxide,” Physical Review, vol. 184, no. 2, pp. 565–573, 1969. View at Publisher · View at Google Scholar · View at Scopus
  18. A. E. Owen, P. G. Le Comber, J. Hajto, M. J. Rose, and A. J. Snell, “Switching in amorphous devices,” International Journal of Electronics, vol. 73, no. 5, pp. 897–906, 1992. View at Publisher · View at Google Scholar · View at Scopus
  19. A. K. Ray and C. A. Hogarth, “A critical review of the observed electrical properties of MIM devices showing VCNR,” International Journal of Electronics, vol. 57, no. 1, pp. 1–78, 1984. View at Publisher · View at Google Scholar · View at Scopus
  20. D. V. Morgan, M. J. Howes, R. D. Pollard, and D. G. P. Waters, “Electroforming and dielectric breakdown in thin aluminium oxide films,” Thin Solid Films, vol. 15, no. 1, pp. 123–131, 1973. View at Publisher · View at Google Scholar · View at Scopus
  21. S. Hirose, H. Niimi, K. Kageyama, A. Ando, H. Ieki, and T. Omata, “Impact of the electrical forming process on the resistance switching behaviors in lanthanum-doped strontium titanate ceramic chip devices,” Japanese Journal of Applied Physics, vol. 52, no. 4, Article ID 045802, 2013. View at Publisher · View at Google Scholar · View at Scopus
  22. A. L. Pergament, G. B. Stefanovich, A. A. Velichko, and S. D. Khanin, “Electronic switching and metal-insulator transitions in compounds of transition metals,” in Condensed Matter at the Leading Edge, pp. 1–67, Nova Science Publishers, 2006. View at Google Scholar
  23. P. A. Cox, Transition Metal Oxides. An Introduction to Their Electronic Structure and Properties, Clarendon Press, Oxford, UK, 1992.
  24. N. F. Mott, Metal-Insulator Transition, Taylor & Francis, London, UK, 2nd edition, 1990.
  25. S. V. Kalinin and N. A. Spaldin, “Functional ion defects in transition metal oxides,” Science, vol. 341, no. 6148, pp. 858–859, 2013. View at Publisher · View at Google Scholar · View at Scopus
  26. S.-W. Cheong, “Transition metal oxides: the exciting world of orbitals,” Nature Materials, vol. 6, no. 12, pp. 927–928, 2007. View at Publisher · View at Google Scholar · View at Scopus
  27. A. L. Pergament, G. B. Stefanovich, and F. A. Chudnovskii, “Metal-semiconductor phase transition and switching effect in oxides of transition metals,” Physics of the Solid State, vol. 36, no. 10, pp. 1590–1597, 1994. View at Google Scholar
  28. F. A. Chudnovskii, L. L. Odynets, A. L. Pergament, and G. B. Stefanovich, “Electroforming and switching in oxides of transition metals: the role of metal-insulator transition in the switching mechanism,” Journal of Solid State Chemistry, vol. 122, no. 1, pp. 95–99, 1996. View at Publisher · View at Google Scholar · View at Scopus
  29. V. P. Malinenko, A. L. Pergament, O. V. Spirin, and V. I. Nikulshin, “Threshold and memory switching in oxides of molybdenum, niobium, tungsten, and titanium,” Journal on Selected Topics in Nano Electronics and Computing, vol. 2, no. 2, pp. 45–49, 2014. View at Google Scholar
  30. A. L. Pergament, P. P. Boriskov, A. A. Velichko, and N. A. Kuldin, “Switching effect and the metal-insulator transition in electric field,” Journal of Physics and Chemistry of Solids, vol. 71, no. 6, pp. 874–879, 2010. View at Publisher · View at Google Scholar · View at Scopus
  31. A. L. Pergament, V. P. Malinenko, O. I. Tulubaeva, and L. A. Aleshina, “Electroforming and switching effects in yttrium oxide,” Physica Status Solidi A, vol. 201, no. 7, pp. 1543–1550, 2004. View at Publisher · View at Google Scholar · View at Scopus
  32. C. J. Dell'Oka, D. L. Pulfrey, and L. Young, “Anodic oxide films,” in Physics of Thin Films, M. H. Francombe and R. W. Hoffman, Eds., vol. 6, pp. 1–79, Academic Press, New York, NY, USA, 1971. View at Google Scholar
  33. G. B. Stefanovich, A. L. Pergament, A. A. Velichko, and L. A. Stefanovich, “Anodic oxidation of vanadium and properties of vanadium oxide films,” Journal of Physics Condensed Matter, vol. 16, no. 23, pp. 4013–4024, 2004. View at Publisher · View at Google Scholar · View at Scopus
  34. D. G. Lovering, Molten Salt Technology, Springer, New York, NY, USA, 1982. View at Publisher · View at Google Scholar
  35. G. V. Samsonov, The Oxide Handbook, IFI/Plenum, New York, NY, USA, 1982.
  36. K. Goto, “On the mechanism of phase transitions of UO2.25,” Solid State Communications, vol. 6, no. 9, pp. 653–655, 1968. View at Publisher · View at Google Scholar · View at Scopus
  37. F. A. Chudnovskii, “Metal-semiconductor phase transition in vanadium oxides and technical applications,” Soviet Physics—Technical Physics, vol. 20, no. 8, pp. 999–1012, 1976. View at Google Scholar
  38. J. Duchene, “Direct infrared measurements of filament transient temperature during switching in vanadium oxide film devices,” Journal of Solid State Chemistry, vol. 12, no. 3-4, pp. 303–306, 1975. View at Publisher · View at Google Scholar · View at Scopus
  39. A. Mansingh and R. Singh, “The mechanism of electrical threshold switching in VO2 crystals,” Journal of Physics C: Solid State Physics, vol. 13, no. 31, pp. 5725–5733, 1980. View at Publisher · View at Google Scholar · View at Scopus
  40. V. N. Andreev, N. E. Timoschenko, I. M. Chernenko, and F. A. Chudnovskii, “Mechanism of formation of switching vanadate-phosphate glasses,” Journal of Technical Physics, vol. 51, no. 8, pp. 1685–1689, 1981. View at Google Scholar
  41. J. K. Higgins, B. K. Temple, and J. E. Lewis, “Electrical properties of vanadate-glass threshold switches,” Journal of Non-Crystalline Solids, vol. 23, no. 2, pp. 187–215, 1977. View at Publisher · View at Google Scholar · View at Scopus
  42. J. G. Zhang and P. C. Eklund, “The switching mechanism in V2O5 gel films,” Journal of Applied Physics, vol. 64, no. 2, pp. 729–733, 1988. View at Publisher · View at Google Scholar · View at Scopus
  43. J. Bullot, O. Gallias, M. Gauthier, and J. Livage, “Threshold switching in V2O5 layers deposited from gels,” Physica Status Solidi (A), vol. 71, no. 1, pp. K1–K4, 1982. View at Google Scholar
  44. A. I. Ivon, V. R. Kolbunov, and I. M. Chernenko, “Voltage-current characteristics of vanadium dioxide based ceramics,” Journal of the European Ceramic Society, vol. 23, no. 12, pp. 2113–2118, 2003. View at Publisher · View at Google Scholar · View at Scopus
  45. R. L. Remke, R. M. Walser, and R. W. Bené, “The effect of interfaces on electronic switching in VO2 thin films,” Thin Solid Films, vol. 97, no. 2, pp. 129–143, 1982. View at Publisher · View at Google Scholar · View at Scopus
  46. R. Collongues, La Non-Stoechiometrie, Masson, Paris, France, 1971.
  47. P. Kofstad, Nonstoichiometry, Diffusion and Electrical Conductivity in Binary Metal Oxides, Wiley-Interscience, New York, NY, USA, 1972.
  48. D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and A. Chin, “Percolation conductivity in hafnium sub-oxides,” Applied Physics Letters, vol. 105, no. 26, Article ID 262903, 2014. View at Publisher · View at Google Scholar
  49. W. Kulisch, D. Gilliland, G. Ceccone et al., “Tantalum pentoxide as a material for biosensors: deposition, properties and applications,” in Nanostructured Materials for Advanced Technological Applications, J. P. Reithmaier, P. Petkov, W. Kulisch, and C. Popov, Eds., NATO Science for Peace and Security Series B: Physics and Biophysics, pp. 509–524, Springer Science+Business Media, Dordrecht, The Netherlands, 2009. View at Publisher · View at Google Scholar
  50. K. D. Tséndin, É. A. Lebedev, and A. B. Shmel'kin, “Instabilities with S- and N-shaped current-voltage characteristics and phase transitions in chalcogenide vitreous semiconductors and polymers,” Physics of the Solid State, vol. 47, no. 3, pp. 439–445, 2005. View at Publisher · View at Google Scholar · View at Scopus
  51. A. Pergament and G. Stefanovich, “Insulator-to-metal transition in vanadium sesquioxide: does the Mott criterion work in this case?” Phase Transitions, vol. 85, no. 3, pp. 185–194, 2012. View at Publisher · View at Google Scholar · View at Scopus
  52. J. S. Brockman, L. Gao, B. Hughes et al., “Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide,” Nature Nanotechnology, vol. 9, no. 6, pp. 453–458, 2014. View at Publisher · View at Google Scholar · View at Scopus
  53. A. L. Pergament, V. P. Malinenko, L. A. Aleshina, E. L. Kazakova, and N. A. Kuldin, “Electrical switching in thin film structures based on molybdenum oxides,” Journal of Experimental Physics, vol. 2014, Article ID 951297, 6 pages, 2014. View at Publisher · View at Google Scholar
  54. A. L. Pergament, V. P. Malinenko, L. A. Aleshina, and V. V. Kolchigin, “Metal-insulator phase transition and electrical switching in manganese dioxide,” Physics of the Solid State, vol. 54, no. 12, pp. 2486–2490, 2012. View at Publisher · View at Google Scholar · View at Scopus
  55. L. Mai, F. Yang, Y. Zhao et al., “Molybdenum oxide nanowires: synthesis and properties,” Materials Today, vol. 14, no. 7-8, pp. 346–353, 2011. View at Publisher · View at Google Scholar · View at Scopus
  56. M. C. Rao, K. Ravindranadh, A. Kasturi, and M. S. Shekhawat, “Structural stoichiometry and phase transitions of MoO3 thin films for solid state microbatteries,” Research Journal of Recent Sciences, vol. 2, no. 4, pp. 67–73, 2013. View at Google Scholar
  57. R. L. Smith and G. S. Rohrer, “Scanning probe microscopy of cleaved molybdates: α-MoO3(010), Mo18O52(100), Mo8O23(010), and η-Mo4O11(100),” Journal of Solid State Chemistry, vol. 124, no. 1, pp. 104–115, 1996. View at Publisher · View at Google Scholar · View at Scopus
  58. D. O. Scanlon, G. W. Watson, D. J. Payne, G. R. Atkinson, R. G. Egdell, and D. S. L. Law, “Theoretical and experimental study of the electronic structures of MoO3 and MoO2,” Journal of Physical Chemistry C, vol. 114, no. 10, pp. 4636–4645, 2010. View at Publisher · View at Google Scholar · View at Scopus
  59. M. Arita, H. Kaji, T. Fujii, and Y. Takahashi, “Resistance switching properties of molybdenum oxide films,” Thin Solid Films, vol. 520, no. 14, pp. 4762–4767, 2012. View at Publisher · View at Google Scholar · View at Scopus
  60. M. Hasan, “A materials approach to resistive switching memory oxides,” Journal of Semiconductor Technology and Science, vol. 8, no. 1, pp. 66–79, 2008. View at Google Scholar
  61. A. I. Gavrilyuk and N. A. Sekushin, Electrochromism and Photochromism in Oxides of Tungsten and Molybdenum, Nauka, Leningrad, Russia, 1990, (Russian).
  62. H. Fujishita, M. Sato, S. M. Shapiro, and S. Hoshino, “Inelastic neutron scattering of the low-dimensional conductors (TaSe4)2I and Mo8O23,” Physica B+C, vol. 143, no. 1–3, pp. 201–203, 1986. View at Publisher · View at Google Scholar · View at Scopus
  63. T. Sato, T. Dobashi, H. Komatsu, T. Takahashi, and M. Koyano, “Electronic structure of η-Mo4O11 studied by high-resolution angle-resolved photoemission spectroscopy,” Journal of Electron Spectroscopy and Related Phenomena, vol. 144–147, pp. 549–552, 2005. View at Publisher · View at Google Scholar · View at Scopus
  64. Y. Motome and N. Furukawa, “Orbital degeneracy and Mott transition in Mo pyrochlore oxides,” Journal of Physics: Conference Series, vol. 320, Article ID 012060, 2011. View at Publisher · View at Google Scholar · View at Scopus
  65. A. Maeda, T. Furuyama, and S. Tanaka, “Threshold-field behavior and switching in K0.3MoO3,” Solid State Communications, vol. 55, no. 11, pp. 951–955, 1985. View at Publisher · View at Google Scholar · View at Scopus
  66. Y.-C. Lin, D. O. Dumcenco, Y.-S. Huang, and K. Suenaga, “Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2,” Nature Nanotechnology, vol. 9, no. 5, pp. 391–396, 2014. View at Publisher · View at Google Scholar · View at Scopus
  67. B. Sun, W. Zhao, Y. Liu, and P. Chen, “Resistive switching effect of Ag/MoS2/FTO device,” Functional Materials Letters, vol. 8, no. 1, Article ID 1550010, 4 pages, 2015. View at Publisher · View at Google Scholar
  68. R. Rousseau, E. Canadell, P. Alemany, D. H. Galván, and R. Hoffmann, “Origin of the metal-to-insulator transition in H0.33MoO3,” Inorganic Chemistry, vol. 36, no. 21, pp. 4627–4632, 1997. View at Publisher · View at Google Scholar · View at Scopus
  69. E. Canadell and M.-H. Whangbo, “Band electronic structure study of the structural modulation in the Magnéli phase Mo8O23,” Inorganic Chemistry, vol. 29, no. 12, pp. 2256–2260, 1990. View at Publisher · View at Google Scholar · View at Scopus
  70. S. Mukherjee, S. Karmakar, H. Sakata, and B. K. Chaudhuri, “Low-temperature metallic behavior of amorphous MoO3-TeO2 thin films,” Journal of Applied Physics, vol. 97, no. 12, Article ID 123707, 2005. View at Publisher · View at Google Scholar · View at Scopus
  71. A. Mottaghizadeh, Q. Yu, P. L. Lang, A. Zimmers, and H. Aubin, “Metal oxide resistive switching: evolution of the density of states across the metal-insulator transition,” Physical Review Letters, vol. 112, no. 6, Article ID 066803, 2014. View at Publisher · View at Google Scholar · View at Scopus
  72. R. Xie, C. T. Bui, B. Varghese et al., “An electrically tuned solid-state thermal memory based on metal-insulator transition of single-crystalline VO2 nanobeams,” Advanced Functional Materials, vol. 21, no. 9, pp. 1602–1607, 2011. View at Publisher · View at Google Scholar · View at Scopus
  73. M. R. Arora and R. Kelly, “The structure and stoichiometry of anodic films on V, Nb, Ta, Mo and W,” Journal of Materials Science, vol. 12, no. 8, pp. 1673–1684, 1977. View at Publisher · View at Google Scholar · View at Scopus
  74. C. M. Daly and R. G. Keil, “On the anodic oxidation of molybdenum,” Journal of the Electrochemical Society, vol. 122, no. 3, pp. 350–353, 1975. View at Publisher · View at Google Scholar · View at Scopus
  75. A. L. Pergament and G. B. Stefanovich, “Phase composition of anodic oxide films on transition metals: a thermodynamic approach,” Thin Solid Films, vol. 322, no. 1-2, pp. 33–36, 1998. View at Publisher · View at Google Scholar · View at Scopus
  76. R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” Journal of Physics E: Scientific Instruments, vol. 16, no. 12, pp. 1214–1221, 1983. View at Publisher · View at Google Scholar · View at Scopus
  77. W.-H. Ryu, J.-H. Yoon, and H.-S. Kwon, “Morphological control of highly aligned manganese dioxide nanostructure formed by electrodeposition,” Materials Letters, vol. 79, pp. 184–187, 2012. View at Publisher · View at Google Scholar · View at Scopus
  78. A. L. Gusev, T. N. Kondyrina, V. V. Kursheva et al., “Perspectives on application of flexible electrochromic panels in housing and communal services facilities and vehicles,” International Scientific Journal for Alternative Energy and Ecology, vol. 10, no. 78, pp. 122–137, 2009. View at Google Scholar
  79. S. Walia, S. Balendhran, P. Yi et al., “MnO2-based thermopower wave sources with exceptionally large output voltages,” Journal of Physical Chemistry C, vol. 117, no. 18, pp. 9137–9142, 2013. View at Publisher · View at Google Scholar · View at Scopus
  80. H. Wang, C. Peng, J. Zheng, F. Peng, and H. Yu, “Design, synthesis and the electrochemical performance of MnO2/C@CNT as supercapacitor material,” Materials Research Bulletin, vol. 48, no. 9, pp. 3389–3393, 2013. View at Publisher · View at Google Scholar · View at Scopus
  81. M. K. Yang, J.-W. Park, T. K. Ko, and J.-K. Lee, “Resistive switching characteristics of TiN/MnO2/Pt memory devices,” Physica Status Solidi—Rapid Research Letters, vol. 4, no. 8-9, pp. 233–235, 2010. View at Publisher · View at Google Scholar · View at Scopus
  82. R. Ramesham, T. Daud, A. Moopenn, A. P. Thakoor, and S. K. Khanna, “Manganese oxide microswitch for electronic memory based on neural networks,” Journal of Vacuum Science & Technology B, vol. 7, no. 3, pp. 450–454, 1989. View at Publisher · View at Google Scholar
  83. D. B. Rogers, R. D. Shannon, A. W. Sleight, and J. L. Gillson, “Crystal chemistry of metal dioxides with rutile-related structures,” Inorganic Chemistry, vol. 8, no. 4, pp. 841–850, 1969. View at Publisher · View at Google Scholar · View at Scopus
  84. P. H. Klose, “Electrical properties of manganese dioxide and manganese sesquioxide,” Journal of The Electrochemical Society, vol. 117, no. 7, pp. 854–859, 1970. View at Publisher · View at Google Scholar
  85. E. L. Nagaev, Physics of Magnetic Semiconductors, Nauka, Moscow, Russia, 1979, (Russian).
  86. C.-C. Hu and T.-W. Tsou, “Ideal capacitive behavior of hydrous manganese oxide prepared by anodic deposition,” Electrochemistry Communications, vol. 4, no. 2, pp. 105–109, 2002. View at Publisher · View at Google Scholar · View at Scopus
  87. X.-M. Shen and A. Clearfield, “Phase transitions and ion exchange behavior of electrolytically prepared manganese dioxide,” Journal of Solid State Chemistry, vol. 64, no. 3, pp. 270–282, 1986. View at Publisher · View at Google Scholar · View at Scopus
  88. H. Y. Kang and C. C. Liang, “The anodic oxidation of manganese oxides in alkaline electrolytes,” Journal of The Electrochemical Society, vol. 115, no. 1, pp. 6–10, 1968. View at Publisher · View at Google Scholar
  89. Y. M. Hu, M. Y. Zhu, Y. Li, H. M. Jin, and Z. Z. Zhu, “Magnetic-field-assisted hydrothermal growth of manganese dioxide nanostructures and their phase transformation,” Materials Science Forum, vol. 688, pp. 148–152, 2011. View at Publisher · View at Google Scholar · View at Scopus
  90. C. N. R. Rao and B. Raveau, Transition Metal Oxides: Structure, Properties and Synthesis of Ceramics Oxides, Wiley-VCH, New York, NY, USA, 1998.
  91. M. Regulski, R. Przeniosło, I. Sosnowska, and J.-U. Hoffmann, “Short and long range magnetic ordering in β-MnO2—a temperature study,” Journal of the Physical Society of Japan, vol. 73, no. 12, pp. 3444–3447, 2004. View at Publisher · View at Google Scholar · View at Scopus
  92. V. P. Malinenko, L. A. Aleshina, S. V. Loginova, and N. D. Tikhonov, “Phase transition in pyrolytic manganese dioxide,” in Proceedings of the 10th International Conference on Physics of Dielectrics, p. 39, Herzen State Pedagogical University of Russia, St. Petersburg, Russia, 2004.
  93. L. A. Aleshina and S. V. Loginova, “Total profiling of an X-ray pattern of pyrolytic manganese dioxide,” Russian Physics Journal, vol. 46, no. 5, pp. 500–503, 2003. View at Publisher · View at Google Scholar
  94. A. West, Basic Solid State Chemistry, Wiley, New York, NY, USA, 1984.
  95. L. Sheng, D. Y. Xing, D. N. Sheng, and C. S. Ting, “Metal-insulator transition in the mixed-valence manganites,” Physical Review B, vol. 56, no. 12, pp. R7053–R7056, 1997. View at Publisher · View at Google Scholar · View at Scopus
  96. A. E. Sovestnov, B. T. Melekh, V. V. Fedorov, and E. V. Fomin, “X-ray emission studies of evolution of the electron and spin structures of Mn in mixed manganites Ln1−xSrxMnO3 (Ln = La, Sm, and Ce),” Physics of the Solid State, vol. 54, pp. 778–781, 2012. View at Google Scholar
  97. E. S. Borovic, V. V. Eremenko, and A. S. Milner, Lectures on Magnetism, Fizmatlit, Moscow, Russia, 2005, (Russian).
  98. É. L. Nagaev, “Mott transitions in heavily doped magnetic semiconductors,” Physics of the Solid State, vol. 40, no. 3, pp. 396–400, 1998. View at Publisher · View at Google Scholar · View at Scopus
  99. I. V. Borisenko, M. A. Karpov, and G. A. Ovsyannikov, “Metal-insulator transition in epitaxial films of LaMnO3 manganites grown by magnetron sputtering,” Technical Physics Letters, vol. 39, no. 12, pp. 1027–1030, 2013. View at Publisher · View at Google Scholar · View at Scopus
  100. M. D. Pickett, G. Medeiros-Ribeiro, and R. S. Williams, “A scalable neuristor built with Mott memristors,” Nature Materials, vol. 12, no. 2, pp. 114–117, 2013. View at Publisher · View at Google Scholar · View at Scopus
  101. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, Wiley, 2006.
  102. F. A. Chudnovskii, A. L. Pergament, D. A. Schaefer, and G. B. Stefanovich, “Effect of laser irradiation on the properties of transition metal oxides,” Journal of Solid State Chemistry, vol. 118, no. 2, pp. 417–418, 1995. View at Publisher · View at Google Scholar · View at Scopus
  103. F. A. Chudnovskii, D. O. Kikalov, A. L. Pergament, and G. B. Stefanovich, “Electrical transport properties and switching in vanadium anodic oxides: effect of laser irradiation,” Physica Status Solidi A, vol. 172, no. 2, pp. 391–395, 1999. View at Publisher · View at Google Scholar · View at Scopus
  104. A. L. Pergament, A. A. Velichko, O. Y. Berezina, E. L. Kazakova, N. A. Kuldin, and D. V. Artyukhin, “Influence of doping on the properties of vanadium oxide gel films,” Journal of Physics Condensed Matter, vol. 20, no. 42, Article ID 422204, 2008. View at Publisher · View at Google Scholar · View at Scopus
  105. O. Y. Berezina, A. A. Velichko, L. A. Lugovskaya, A. L. Pergament, and G. B. Stefanovich, “Metal-semiconductor transition in nonstoichiometric vanadium dioxide films,” Inorganic Materials, vol. 43, no. 5, pp. 505–511, 2007. View at Publisher · View at Google Scholar · View at Scopus
  106. X. Wang, Y. Song, L. L. Tao et al., “Origin of ferromagnetism in aluminum-doped TiO2 thin films: theory and experiments,” Applied Physics Letters, vol. 105, no. 26, Article ID 262402, 2014. View at Publisher · View at Google Scholar
  107. Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” Journal of Applied Physics, vol. 110, no. 3, Article ID 033725, 2011. View at Publisher · View at Google Scholar · View at Scopus
  108. A. Axelevitch, B. Gorenstein, and G. Golan, “Investigation of the electrical transport mechanism in VOx thin films,” Microelectronics Reliability, vol. 51, no. 12, pp. 2119–2123, 2011. View at Publisher · View at Google Scholar · View at Scopus
  109. G. Beydaghyan, V. Basque, and P. V. Ashrit, “High contrast thermochromic switching in vanadium dioxide (VO2) thin films deposited on indium tin oxide substrates,” Thin Solid Films, vol. 522, pp. 204–207, 2012. View at Publisher · View at Google Scholar · View at Scopus
  110. M. Liu, H. Y. Hwang, H. Tao et al., “Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial,” Nature, vol. 487, no. 7407, pp. 345–348, 2012. View at Publisher · View at Google Scholar · View at Scopus
  111. D.-H. Qiu, Q.-Y. Wen, Q.-H. Yang, Z. Chen, Y.-L. Jing, and H.-W. Zhang, “Electrically-driven metal-insulator transition of vanadium dioxide thin films in a metal-oxide-insulator-metal device structure,” Materials Science in Semiconductor Processing, vol. 27, no. 1, pp. 140–144, 2014. View at Publisher · View at Google Scholar · View at Scopus
  112. G. Golan, A. Axelevitch, B. Sigalov, and B. Gorenstein, “Investigation of phase transition mechanism in vanadium oxide thin films,” Journal of Optoelectronics and Advanced Materials, vol. 6, no. 1, pp. 189–195, 2004. View at Google Scholar · View at Scopus
  113. S. Rathi, J.-H. Park, I.-Y. Lee, J. M. Baik, K. S. Yi, and G.-H. Kim, “Unravelling the switching mechanisms in electric field induced insulator-metal transitions in VO2 nanobeams,” Journal of Physics D: Applied Physics, vol. 47, no. 29, Article ID 295101, 2014. View at Publisher · View at Google Scholar · View at Scopus
  114. P. P. Boriskov, A. L. Pergament, A. A. Velichko, G. B. Stefanovich, and N. A. Kuldin, “Metal-insulator transition in electric field: a viewpoint from the switching effect,” http://arxiv.org/abs/cond-mat/0603132.
  115. V. N. Andreev and V. A. Klimov, “Electrical conductivity of the semiconducting phase in vanadium dioxide single crystals,” Physics of the Solid State, vol. 49, no. 12, pp. 2251–2255, 2007. View at Publisher · View at Google Scholar · View at Scopus
  116. A. Pergament, P. Boriskov, N. Kuldin, and A. Velichko, “Electrical conductivity of vanadium dioxide switching channel,” Physica Status Solidi B, vol. 247, no. 9, pp. 2213–2217, 2010. View at Publisher · View at Google Scholar · View at Scopus
  117. A. Pergament, G. Stefanovich, O. Berezina, and D. Kirienko, “Electrical conductivity of tungsten doped vanadium dioxide obtained by the sol-gel technique,” Thin Solid Films, vol. 531, pp. 572–576, 2013. View at Publisher · View at Google Scholar · View at Scopus
  118. V. V. Bryksin, “Small-polaron theory with allowance for the influence of lattice vibrations on the resonance integral,” Journal of Experimental and Theoretical Physics, vol. 73, no. 5, pp. 861–866, 1991. View at Google Scholar
  119. V. N. Andreev, F. A. Chudnovskiy, J. M. Honig, and P. A. Metcalf, “Electrical conductivity in the antiferromagnetic insulating phase of V2O3,” Physical Review B, vol. 70, no. 23, Article ID 235124, 2004. View at Publisher · View at Google Scholar · View at Scopus
  120. V. N. Andreev and V. A. Klimov, “Specific features of electrical conductivity of V3O5 single crystals,” Physics of the Solid State, vol. 53, no. 12, pp. 2424–2430, 2011. View at Publisher · View at Google Scholar · View at Scopus
  121. V. N. Andreev and V. A. Klimov, “Specific features of the electrical conductivity of V4O7 single crystals,” Physics of the Solid State, vol. 51, no. 11, pp. 2235–2240, 2009. View at Publisher · View at Google Scholar · View at Scopus
  122. V. N. Andreev and V. A. Klimov, “Specific features of the electrical conductivity of V6O11,” Physics of the Solid State, vol. 55, no. 9, pp. 1829–1834, 2013. View at Publisher · View at Google Scholar · View at Scopus
  123. D. Ruzmetov, D. Heiman, B. B. Claflin, V. Narayanamurti, and S. Ramanathan, “Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition,” Physical Review B, vol. 79, no. 15, Article ID 153107, 2009. View at Publisher · View at Google Scholar · View at Scopus
  124. D. Fu, K. Liu, T. Tao et al., “Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films,” Journal of Applied Physics, vol. 113, no. 4, Article ID 043707, 2013. View at Publisher · View at Google Scholar · View at Scopus
  125. A. Pergament, G. Stefanovich, and A. Velichko, “Oxide electronics and vanadium dioxide perspective: a review,” Journal on Selected Topics in Nano Electronics and Computing, vol. 1, no. 1, pp. 24–43, 2013. View at Publisher · View at Google Scholar
  126. E. S. Reich, “Metal oxide chips show promise,” Nature, vol. 494, no. 7439, p. 17, 2013. View at Publisher · View at Google Scholar · View at Scopus
  127. A. Zimmers, L. Aigouy, M. Mortier et al., “Role of thermal heating on the voltage induced insulator-metal transition in VO2,” Physical Review Letters, vol. 110, no. 5, Article ID 056601, 2013. View at Publisher · View at Google Scholar · View at Scopus
  128. B. S. Mun, J. Yoon, S.-K. Mo et al., “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Applied Physics Letters, vol. 103, no. 6, Article ID 061902, 2013. View at Publisher · View at Google Scholar · View at Scopus
  129. S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2,” Advanced Materials, vol. 25, no. 42, pp. 6128–6132, 2013. View at Publisher · View at Google Scholar · View at Scopus
  130. J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Applied Physics Letters, vol. 105, no. 8, Article ID 083503, 2014. View at Publisher · View at Google Scholar · View at Scopus
  131. G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” Journal of Physics: Condensed Matter, vol. 12, no. 41, pp. 8837–8845, 2000. View at Publisher · View at Google Scholar · View at Scopus
  132. M. Nakano, K. Shibuya, D. Okuyama et al., “Collective bulk carrier delocalization driven by electrostatic surface charge accumulation,” Nature, vol. 487, no. 7408, pp. 459–462, 2012. View at Publisher · View at Google Scholar · View at Scopus
  133. T. Nan, M. Liu, W. Ren, Z.-G. Ye, and N. X. Sun, “Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures,” Scientific Reports, vol. 4, article 5931, 7 pages, 2014. View at Publisher · View at Google Scholar · View at Scopus
  134. A. A. Stabile, S. K. Singh, T. Wu, L. Whittaker, S. Banerjee, and G. Sambandamurthy, “Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams,” Applied Physics Letters, vol. 107, no. 1, Article ID 013503, 2015. View at Publisher · View at Google Scholar
  135. S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” Journal of Applied Physics, vol. 113, no. 18, Article ID 184501, 2013. View at Publisher · View at Google Scholar · View at Scopus
  136. F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “Rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Applied Physics Letters, vol. 91, no. 22, Article ID 223505, 2007. View at Publisher · View at Google Scholar · View at Scopus
  137. P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant, and L. Cario, “Nonthermal and purely electronic resistive switching in a Mott memory,” Physical Review B, vol. 90, no. 4, Article ID 045146, 2014. View at Publisher · View at Google Scholar · View at Scopus
  138. P. Stoliar, L. Cario, E. Janod et al., “Universal electric-field-driven resistive transition in narrow-gap Mott insulators,” Advanced Materials, vol. 25, no. 23, pp. 3222–3226, 2013. View at Publisher · View at Google Scholar · View at Scopus
  139. N. Shukla, T. Joshi, S. Dasgupta, P. Borisov, D. Lederman, and S. Datta, “Electrically induced insulator to metal transition in epitaxial SmNiO3 thin films,” Applied Physics Letters, vol. 105, no. 1, Article ID 012108, 2014. View at Publisher · View at Google Scholar · View at Scopus
  140. P. M. Marley, A. A. Stabile, C. P. Kwan et al., “Charge disproportionation and voltage-induced metal-insulator transitions evidenced in β-PbxV2O5 nanowires,” Advanced Functional Materials, vol. 23, no. 2, pp. 153–160, 2013. View at Publisher · View at Google Scholar · View at Scopus
  141. M. Kang, S. Yu, and J. Son, “Voltage-induced insulator-to-metal transition of hydrogen-treated NbO2 thin films,” Journal of Physics D: Applied Physics, vol. 48, no. 9, Article ID 095301, 2015. View at Publisher · View at Google Scholar · View at Scopus
  142. A. L. Pergament, E. L. Kazakova, and G. B. Stefanovich, “Optical and electrical properties of vanadium pentoxide xerogel films: modification in electric field and the role of ion transport,” Journal of Physics D: Applied Physics, vol. 35, no. 17, pp. 2187–2197, 2002. View at Publisher · View at Google Scholar · View at Scopus
  143. A. L. Pergament, G. B. Stefanovich, and F. A. Chudnovskii, “Semiconductor-metal phase transition and switching in vanadium dioxide in a high electric field,” Technical Physics Letters, vol. 19, no. 10, pp. 663–665, 1993. View at Google Scholar
  144. B.-J. Kim, G. Seo, Y. W. Lee, S. Choi, and H.-T. Kim, “Linear characteristics of a metalinsulator transition voltage and oscillation frequency in VO2 devices,” IEEE Electron Device Letters, vol. 31, no. 11, pp. 1314–1316, 2010. View at Publisher · View at Google Scholar · View at Scopus
  145. A. Beaumont, J. Leroy, J.-C. Orlianges, and A. Crunteanu, “Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO2 layers integrated in crossbars geometry,” Journal of Applied Physics, vol. 115, Article ID 154502, 2014. View at Publisher · View at Google Scholar · View at Scopus
  146. A. Belatreche, L. Maguire, M. McGinnity, L. McDaid, and A. Ghani, “Computing with biologically inspired neural oscillators: application to colour image segmentation,” Advances in Artificial Intelligence, vol. 2010, Article ID 405073, 21 pages, 2010. View at Publisher · View at Google Scholar
  147. P. Strumillo and M. Strzelecki, “Application of coupled neural oscillators for image texture segmentation and modeling of biological rhythms,” International Journal of Applied Mathematics and Computer Science, vol. 16, no. 4, pp. 513–523, 2006. View at Google Scholar · View at MathSciNet · View at Scopus
  148. S. Datta, N. Shukla, M. Cotter, A. Parihar, and A. Raychowdhury, “Neuro inspired computing with coupled relaxation oscillators,” in Proceedings of the 51st Annual Design Automation Conference (DAC '14), pp. 1–6, ACM, San Francisco, Calif, USA, June 2014.
  149. A. Parihar, N. Shukla, S. Datta, and A. Raychowdhury, “Exploiting synchronization properties of correlated electron devices in a non-boolean computing fabric for template matching,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 4, no. 4, pp. 450–459, 2014. View at Publisher · View at Google Scholar · View at Scopus
  150. A. Parihar, N. Shukla, S. Datta, and A. Raychowdhury, “Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: a model study,” Journal of Applied Physics, vol. 117, no. 5, Article ID 054902, 2015. View at Publisher · View at Google Scholar
  151. Y. Wang, J. Chai, S. Wang et al., “Electrical oscillation in Pt/VO2 bilayer strips,” Journal of Applied Physics, vol. 117, no. 6, Article ID 064502, 2015. View at Publisher · View at Google Scholar
  152. S. A. Dyakov, J. Dai, M. Yan, and M. Qiu, “Thermal self-oscillations in radiative heat exchange,” Applied Physics Letters, vol. 106, no. 6, Article ID 064103, 2015. View at Publisher · View at Google Scholar
  153. Z. Topalian, S.-Y. Li, G. A. Niklasson, C. G. Granqvist, and L. B. Kish, “Resistance noise at the metal-insulator transition in thermochromic VO2 films,” Journal of Applied Physics, vol. 117, no. 2, Article ID 025303, 2015. View at Publisher · View at Google Scholar
  154. X. He, J. Xu, X. Xu et al., “Negative capacitance switching via VO2 band gap engineering driven by electric field,” Applied Physics Letters, vol. 106, no. 9, Article ID 093106, 2015. View at Publisher · View at Google Scholar
  155. Y. Liu, T. P. Chen, Z. Liu et al., “Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film,” Applied Physics A, vol. 105, no. 4, pp. 855–860, 2011. View at Publisher · View at Google Scholar · View at Scopus
  156. S. Wen, Z. Zeng, and T. Huang, “Exponential stability analysis of memristor-based recurrent neural networks with time-varying delays,” Neurocomputing, vol. 97, pp. 233–240, 2012. View at Publisher · View at Google Scholar · View at Scopus
  157. S. D. Ha and S. Ramanathan, “Adaptive oxide electronics: a review,” Journal of Applied Physics, vol. 110, no. 7, Article ID 071101, 2011. View at Publisher · View at Google Scholar
  158. A. Velichko, A. Pergament, V. Putrolaynen, O. Berezina, and G. Stefanovich, “Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method,” Materials Science in Semiconductor Processing, vol. 29, pp. 315–320, 2015. View at Publisher · View at Google Scholar · View at Scopus
  159. F. J. Wong, T. S. Sriram, B. R. Smith, and S. Ramanathan, “Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices,” Solid-State Electronics, vol. 87, pp. 21–26, 2013. View at Publisher · View at Google Scholar · View at Scopus
  160. V. H. Mai, A. Moradpour, P. A. Senzier et al., “Memristive and neuromorphic behavior in a LixCoO2 nanobattery,” Scientific Reports, vol. 5, article 7761, 2015. View at Publisher · View at Google Scholar · View at Scopus
  161. A. A. Bessonov, M. N. Kirikova, D. I. Petukhov, M. Allen, T. Ryhänen, and M. J. A. Bailey, “Layered memristive and memcapacitive switches for printable electronics,” Nature Materials, vol. 14, pp. 199–204, 2015. View at Publisher · View at Google Scholar · View at Scopus
  162. M. Prezioso, F. Merrikh-Bayat, B. D. Hoskins, G. C. Adam, K. K. Likharev, and D. B. Strukov, “Training and operation of an integrated neuromorphic network based on metal-oxide memristors,” Nature, vol. 521, no. 7550, pp. 61–64, 2015. View at Publisher · View at Google Scholar
  163. D. E. Nikonov, G. Csaba, W. Porod et al., “Coupled-oscillator associative memory array operation,” http://arxiv.org/abs/1304.6125.
  164. S. D. Ha, Y. Zhou, A. E. Duwel, D. W. White, and S. Ramanathan, “quick switch: strongly correlated electronic phase transition systems for cutting-edge microwave devices,” IEEE Microwave Magazine, vol. 15, no. 6, pp. 32–44, 2014. View at Publisher · View at Google Scholar
  165. G. Seo, B.-J. Kim, H.-T. Kim, and Y. W. Lee, “Thermally- or optically-biased memristive switching in two-terminal VO2 devices,” Current Applied Physics, vol. 14, no. 9, pp. 1251–1256, 2014. View at Publisher · View at Google Scholar · View at Scopus
  166. M. D. Goldflam, M. K. Liu, B. C. Chapler et al., “Voltage switching of a VO2 memory metasurface using ionic gel,” Applied Physics Letters, vol. 105, no. 4, Article ID 041117, 2014. View at Publisher · View at Google Scholar · View at Scopus
  167. B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Letters, vol. 31, no. 1, pp. 14–16, 2010. View at Publisher · View at Google Scholar · View at Scopus
  168. Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annual Review of Materials Research, vol. 41, pp. 337–367, 2011. View at Publisher · View at Google Scholar · View at Scopus
  169. Y. Zhou and S. Ramanathan, “Correlated electron materials and field effect transistors for logic: a review,” Critical Reviews in Solid State and Materials Sciences, vol. 38, no. 4, pp. 286–317, 2013. View at Publisher · View at Google Scholar · View at Scopus
  170. S. Kim, J. Park, J. Woo et al., “Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories,” Microelectronic Engineering, vol. 107, pp. 33–36, 2013. View at Publisher · View at Google Scholar · View at Scopus
  171. D. Lee, J. Park, J. Park et al., “Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory,” Advanced Materials, vol. 27, no. 1, pp. 59–64, 2014. View at Publisher · View at Google Scholar · View at Scopus
  172. S. Nakamura, “Negative differential resistivity from holography,” Progress of Theoretical Physics, vol. 124, no. 6, pp. 1105–1114, 2010. View at Publisher · View at Google Scholar · View at Scopus
  173. E. Dagotto, “Complexity in strongly correlated electronic systems,” Science, vol. 309, no. 5732, pp. 257–262, 2005. View at Publisher · View at Google Scholar · View at Scopus
  174. D.-H. Kwon, K. M. Kim, J. H. Jang et al., “Atomic structure of conducting nanofilaments in TiO2 resistive switching memory,” Nature Nanotechnology, vol. 5, no. 2, pp. 148–153, 2010. View at Publisher · View at Google Scholar · View at Scopus
  175. J. J. Yang, J. P. Strachan, F. Miao et al., “Metal/TiO2 interfaces for memristive switches,” Applied Physics A, vol. 102, no. 4, pp. 785–789, 2011. View at Publisher · View at Google Scholar · View at Scopus
  176. K. M. Kim, S. R. Lee, S. Kim, M. Chang, and C. S. Hwang, “Self-limited switching in Ta2O5/TaOx memristors exhibiting uniform multilevel changes in resistance,” Advanced Functional Materials, vol. 10, pp. 1527–1534, 2015. View at Publisher · View at Google Scholar · View at Scopus
  177. L. Zhu, J. Zhou, Z. Guo, and Z. Sun, “Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory,” Applied Physics Letters, vol. 106, Article ID 091903, 2015. View at Publisher · View at Google Scholar