Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

Figure 3

Distributions of equipotential contours, electric fields, and interface charges at breakdown for the UD and LVID SOI LDMOS. (a) Equipotential contours (10 V/contour) distributions for the UD SOI LDMOS with the optimized = 9 × 10¹⁵ cm⁻³; (b) equipotential contours (10 V/contour) distributions for the LVID SOI LDMOS with the optimized = 4 × 10¹⁵ cm⁻³, = 4.48 × 10²⁰ cm⁻⁴. (c) The comparison of the lateral surface electric field distributions at breakdown. (d) Interface charges concentration distributions of LVID profile and UD profile at breakdown.

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