Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

Figure 4

Vertical electric fields and potentials distributions at breakdown along line MN for UD SOI LDMOS ( = 9 × 10¹⁵ cm⁻³) and LVID SOI LDMOS ( = 4 × 10¹⁵ cm⁻³, = 4.48 × 10²⁰ cm⁻⁴).