High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Figure 2

Analysis of the 95% single crystal SiGe film. Plot (a) shows -2 scan in the direction normal to the surface, graph (b) shows phi scan of SiGe peaks for the relative atomic alignment, (c) wafer mapping with majority peak shows the distribution of a single crystal, (d) shows phi scan of sapphire peaks for relative atomic alignment, (e) shows HRTEM and its SAED result of the SiGe (green)/sapphire (yellow) interface, and (f) shows low magnification TEM image after the ion milling process.