High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets
(a) Calculated phonon-limited 300 K electron low-field mobility in relaxed alloys. Results with (circle) and without (triangle) the inclusion of alloy scattering are shown [16, 17]. (b) Three pairs in three-dimensional (3D) plot for room temperature electron mobilities in SiGe films as a function of twin density (TM) and dopant concentration. Red and blue dots show the data points for 99.5% and 95% single crystal SiGe samples grown on -plane sapphire substrates, respectively.
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