Advances in Condensed Matter Physics / 2015 / Article / Fig 5

Research Article

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Figure 5

Etch-pit test results of (a) typical SiGe on Si(100) wafer with Ge content = 35% and of (b) rhombohedral SiGe on -plane sapphire with Ge content = 35% (c) threading dislocation etch-pit density of on sapphire substrate based on the Ge content.

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.