Research Article
High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets
Figure 5
Etch-pit test results of (a) typical SiGe on Si(100) wafer with Ge content = 35% and of (b) rhombohedral SiGe on -plane sapphire with Ge content = 35% (c) threading dislocation etch-pit density of on sapphire substrate based on the Ge content.
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