High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Table 1

Etchant composition for etch-pit density tests and its effects.

Etch	Composition (Mol %)			Results on {100}
	Solvent	HF	Oxidizer	Line defects	“Point” defects
Secco	67.6	32.2	0.17	Pits	Shallow pits or hillocks
Sirtl	71.2	26.3	2.5	Pits or mounds	—
Wright	78.5	16.1	5.4	Pits	Shallow pits
Seiter	78.5	5.9	15.6	Mounds	Mounds

H₂O + CH₃COOH (HAc); CrO₃ + HNO₃.