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Advances in Condensed Matter Physics
Volume 2015, Article ID 847510, 6 pages
Research Article

Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, No. 500, Dong Chuan Road, Shanghai 200241, China

Received 27 November 2014; Accepted 25 December 2014

Academic Editor: Wen Lei

Copyright © 2015 W. W. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.