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Advances in Condensed Matter Physics
Volume 2015, Article ID 847510, 6 pages
http://dx.doi.org/10.1155/2015/847510
Research Article

Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, No. 500, Dong Chuan Road, Shanghai 200241, China

Received 27 November 2014; Accepted 25 December 2014

Academic Editor: Wen Lei

Copyright © 2015 W. W. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

W. W. Wang, F. M. Guo, and Y. Q. Li, “Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector,” Advances in Condensed Matter Physics, vol. 2015, Article ID 847510, 6 pages, 2015. https://doi.org/10.1155/2015/847510.