Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

<div>(a) Raman shift of A<sub>1</sub>(LO) mode of AlGaN as a function of temperature together with the contribution of thermal expansion of lattice and phonon decay effects. (b) Temperature-dependent stress in AlGaN and its contribution to the Raman shift.</div>

Advances in Condensed Matter Physics

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Figure 3: Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering 

Figure 3 | Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering 