Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Table 2

Parameters used in theoretical calculation.

Material	(GPa)	(GPa)	(GPa)	(GPa)	(GPa)	(m)	(Å)
GaN^a	390	145	106	398	478.5	2	3.206
AlN^b	410	149	99	389	508.6		3.131
Al0.27Ga0.73N	395.5	146	104	395.6	486.7	0.025	3.1858
sapphire	496	164	115	498	606.9	800

Polian et al. [17].
^bMcNeil et al. [18].