The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature

Figure 1

Surface structure investigated with SEM in the (100) oriented Ge single crystal, which exposed at 4 × 10¹⁶ cm⁻² Ga dose at an ion energy of 100 keV. (a) As-implanted sample. (b) Sample annealed at 800°C RTA in the flowing atmosphere.

(a)

(b)