The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature

Figure 2

(a) dependence of the sheet resistance for samples with the different annealing temperatures. (b) The enlarged plot of (a) near the superconducting transition temperature . (c) The thermal hysteresis curves for the samples annealed at temperature window (600°C–850°C). The arrows show the direction of the thermal cycle.