The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature

Figure 3

(a) The dependence of normalized magnetic resistance measured at  K for the samples annealed at temperature ranging from 300°C to 850°C. (b) dependence of the sheet resistance at various magnetic fields applied perpendicular to the surface for the samples annealed at 800°C. The inset shows the field-temperature () phase diagram.

(a)

(b)