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Advances in Condensed Matter Physics
Volume 2016, Article ID 8017139, 6 pages
http://dx.doi.org/10.1155/2016/8017139
Research Article

Large-Signal DG-MOSFET Modelling for RFID Rectification

1Institute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Edificio de Electrónica y Telecomunicación, Campus Universitario de Tafira, 35017 Las Palmas, Spain
2Departament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Escola Tècnica Superior d’Enginyeria, Av. Dels Països Catalans 26, 43007 Tarragona, Spain

Received 6 September 2016; Accepted 4 October 2016

Academic Editor: Luis L. Bonilla

Copyright © 2016 R. Rodríguez et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out.